| Manufacturer Part Number : |
ALD1110EPAL |
| Our Part Number : |
IC-ALD1110EPAL |
| Manufacturer : |
Advanced Linear Devices Inc. |
| Description : |
MOSFET 2N-CH 10V 8DIP |
| Packaging : |
Tube |
| Series : |
EPAD? |
| Part Status : |
Active |
| FET Type : |
2 N-Channel (Dual) Matched Pair |
| Technology : |
- |
| Drain to Source Voltage (Vdss) : |
10V |
| Current - Continuous Drain (Id) @ 25°C : |
- |
| Drive Voltage (Max Rds On, Min Rds On) : |
- |
| Vgs(th) (Max) @ Id : |
1.01V @ 1μA |
| Gate Charge (Qg) (Max) @ Vgs : |
- |
| Input Capacitance (Ciss) (Max) @ Vds : |
2.5pF @ 5V |
| Vgs (Max) : |
- |
| FET Feature : |
Standard |
| Power Dissipation (Max) : |
600mW |
| Rds On (Max) @ Id, Vgs : |
500 Ohm @ 5V |
| Operating Temperature : |
0°C ~ 70°C (TJ) |
| Mounting Type : |
Through Hole |
| Supplier Device Package : |
8-DIP (0.300", 7.62mm) |
| Package / Case : |
8-PDIP |
| Other Part Number : |
ALD1110EPAL-ND |
| Delivery Time : |
Ship within 1 day. |
| Manufacturer Production time : |
6-8 weeks |
| Weight : |
0.27685 KG |
ALD1110EPAL.pdf
