| Manufacturer Part Number : |
EPC2103ENG |
| Our Part Number : |
IC-EPC2103ENG |
| Manufacturer : |
EPC |
| Description : |
TRANS GAN 2N-CH 80V BUMPED DIE |
| Packaging : |
Tray |
| Series : |
eGaN? |
| Part Status : |
Active |
| FET Type : |
2 N-Channel (Half Bridge) |
| Technology : |
- |
| Drain to Source Voltage (Vdss) : |
80V |
| Current - Continuous Drain (Id) @ 25°C : |
23A |
| Drive Voltage (Max Rds On, Min Rds On) : |
- |
| Vgs(th) (Max) @ Id : |
2.5V @ 7mA |
| Gate Charge (Qg) (Max) @ Vgs : |
6.5nC @ 5V |
| Input Capacitance (Ciss) (Max) @ Vds : |
760pF @ 40V |
| Vgs (Max) : |
- |
| FET Feature : |
GaNFET (Gallium Nitride) |
| Power Dissipation (Max) : |
- |
| Rds On (Max) @ Id, Vgs : |
5.5 mOhm @ 20A, 5V |
| Operating Temperature : |
-40°C ~ 150°C (TJ) |
| Mounting Type : |
Surface Mount |
| Supplier Device Package : |
Die |
| Package / Case : |
Die |
| Other Part Number : |
917-EPC2103ENG-ND |
| Delivery Time : |
Ship within 1 day. |
| Manufacturer Production time : |
6-8 weeks |
| Weight : |
0.28387 KG |
EPC2103ENG.pdf
