| Manufacturer Part Number : |
EPC2108ENGRT |
| Our Part Number : |
IC-EPC2108ENGRT |
| Manufacturer : |
EPC |
| Description : |
TRANS GAN 3N-CH BUMPED DIE |
| Packaging : |
Tape & Reel (TR) |
| Series : |
eGaN? |
| Part Status : |
Active |
| FET Type : |
3 N-Channel (Half Bridge + Synchronous Bootstrap) |
| Technology : |
- |
| Drain to Source Voltage (Vdss) : |
60V, 100V |
| Current - Continuous Drain (Id) @ 25°C : |
1.7A, 500mA |
| Drive Voltage (Max Rds On, Min Rds On) : |
- |
| Vgs(th) (Max) @ Id : |
2.5V @ 100μA, 2.5V @ 20μA |
| Gate Charge (Qg) (Max) @ Vgs : |
0.22nC @ 5V, 0.044nC @ 5V |
| Input Capacitance (Ciss) (Max) @ Vds : |
22pF @ 30V, 7pF @ 30V |
| Vgs (Max) : |
- |
| FET Feature : |
GaNFET (Gallium Nitride) |
| Power Dissipation (Max) : |
- |
| Rds On (Max) @ Id, Vgs : |
190 mOhm @ 2.5A, 5V, 3.3 Ohm @ 2.5A, 5V |
| Operating Temperature : |
-40°C ~ 150°C (TJ) |
| Mounting Type : |
Surface Mount |
| Supplier Device Package : |
9-VFBGA |
| Package / Case : |
9-BGA (1.35x1.35) |
| Other Part Number : |
917-EPC2108ENGRTR-ND |
| Delivery Time : |
Ship within 1 day. |
| Manufacturer Production time : |
6-8 weeks |
| Weight : |
0.28373 KG |
EPC2108ENGRT.pdf
