| Manufacturer Part Number : |
SCTWA50N120 |
| Our Part Number : |
IC-SCTWA50N120 |
| Manufacturer : |
STMicroelectronics |
| Description : |
MOSFET N-CH 1200V 65A HIP247 |
| Packaging : |
- |
| Series : |
- |
| Part Status : |
Active |
| FET Type : |
N-Channel |
| Technology : |
SiCFET (Silicon Carbide) |
| Drain to Source Voltage (Vdss) : |
1200V |
| Current - Continuous Drain (Id) @ 25°C : |
65A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) : |
20V |
| Vgs(th) (Max) @ Id : |
3V @ 1mA |
| Gate Charge (Qg) (Max) @ Vgs : |
122nC @ 20V |
| Input Capacitance (Ciss) (Max) @ Vds : |
1900pF @ 400V |
| Vgs (Max) : |
+25V, -10V |
| FET Feature : |
- |
| Power Dissipation (Max) : |
318W (Tc) |
| Rds On (Max) @ Id, Vgs : |
69 mOhm @ 40A, 20V |
| Operating Temperature : |
-55°C ~ 200°C (TJ) |
| Mounting Type : |
Through Hole |
| Supplier Device Package : |
HiP247? |
| Package / Case : |
TO-247-3 |
| Other Part Number : |
SCTWA50N120-ND |
| Delivery Time : |
Ship within 1 day. |
| Manufacturer Production time : |
6-8 weeks |
| Weight : |
0.22163 KG |
SCTWA50N120.pdf
