| Manufacturer Part Number : |
SI8819EDB-T2-E1 |
| Our Part Number : |
IC-SI8819EDB-T2-E1 |
| Manufacturer : |
Vishay Siliconix |
| Description : |
MOSFET P-CH 12V 2.9A 4-MICROFOOT |
| Packaging : |
- |
| Series : |
- |
| Part Status : |
Active |
| FET Type : |
P-Channel |
| Technology : |
MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) : |
12V |
| Current - Continuous Drain (Id) @ 25°C : |
2.9A (Ta) |
| Drive Voltage (Max Rds On, Min Rds On) : |
1.5V, 3.7V |
| Vgs(th) (Max) @ Id : |
900mV @ 250μA |
| Gate Charge (Qg) (Max) @ Vgs : |
17nC @ 8V |
| Input Capacitance (Ciss) (Max) @ Vds : |
650pF @ 6V |
| Vgs (Max) : |
±8V |
| FET Feature : |
- |
| Power Dissipation (Max) : |
900mW (Ta) |
| Rds On (Max) @ Id, Vgs : |
80 mOhm @ 1.5A, 3.7V |
| Operating Temperature : |
-55°C ~ 150°C (TJ) |
| Mounting Type : |
Surface Mount |
| Supplier Device Package : |
4-MICRO FOOT? (0.8x0.8) |
| Package / Case : |
4-XFBGA |
| Other Part Number : |
SI8819EDB-T2-E1-ND |
| Delivery Time : |
Ship within 1 day. |
| Manufacturer Production time : |
6-8 weeks |
| Weight : |
0.25518 KG |
SI8819EDB-T2-E1.pdf
