| Manufacturer Part Number : |
SIHU2N80E-GE3 |
| Our Part Number : |
IC-SIHU2N80E-GE3 |
| Manufacturer : |
Vishay Siliconix |
| Description : |
MOSFET N-CH 800V 2.8A IPAK |
| Packaging : |
- |
| Series : |
E |
| Part Status : |
Active |
| FET Type : |
N-Channel |
| Technology : |
MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) : |
800V |
| Current - Continuous Drain (Id) @ 25°C : |
2.8A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) : |
10V |
| Vgs(th) (Max) @ Id : |
4V @ 250μA |
| Gate Charge (Qg) (Max) @ Vgs : |
19.6nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds : |
315pF @ 100V |
| Vgs (Max) : |
±30V |
| FET Feature : |
- |
| Power Dissipation (Max) : |
62.5W (Tc) |
| Rds On (Max) @ Id, Vgs : |
2.75 Ohm @ 1A, 10V |
| Operating Temperature : |
-55°C ~ 150°C (TJ) |
| Mounting Type : |
Through Hole |
| Supplier Device Package : |
IPAK (TO-251) |
| Package / Case : |
TO-251-3 Long Leads, IPak, TO-251AB |
| Other Part Number : |
SIHU2N80E-GE3-ND |
| Delivery Time : |
Ship within 1 day. |
| Manufacturer Production time : |
6-8 weeks |
| Weight : |
0.25488 KG |
SIHU2N80E-GE3.pdf
