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Manufacturer Part Number: TK10E60W,S1VX
Our Part Number:

IC-TK10E60W,S1VX

Product Category: MOSFETs
Manufacturer / Brand: Toshiba Semiconductor and Storage
Brief Description: MOSFET N CH 600V 9.7A TO-220
Datasheet Download: TK10E60W,S1VX pdf datasheetTK10E60W,S1VX.pdf
Package Type: TO-220-3
Quantity Available: 57270 Pieces
Unit Price: Quote by Email: sales@ic-chips.com
Lead Free Status / RoHS Status: Lead free / RoHS Compliant
Moisture Sensitivity Level(MSL): 3(168 Hours)
Delivery Time: 1-2 Days
Date Code (D/C): New
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Manufacturer Part Number : TK10E60W,S1VX
Our Part Number : IC-TK10E60W,S1VX
Manufacturer : Toshiba Semiconductor and Storage
Description : MOSFET N CH 600V 9.7A TO-220
Packaging : Tube
Series : DTMOSIV
Part Status : Active
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 600V
Current - Continuous Drain (Id) @ 25°C : 9.7A (Ta)
Drive Voltage (Max Rds On, Min Rds On) : 10V
Vgs(th) (Max) @ Id : 3.7V @ 500μA
Gate Charge (Qg) (Max) @ Vgs : 20nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds : 700pF @ 300V
Vgs (Max) : ±30V
FET Feature : Super Junction
Power Dissipation (Max) : 100W (Tc)
Rds On (Max) @ Id, Vgs : 380 mOhm @ 4.9A, 10V
Operating Temperature : 150°C (TJ)
Mounting Type : Through Hole
Supplier Device Package : TO-220
Package / Case : TO-220-3
Other Part Number : TK10E60WS1VX-ND
Delivery Time : Ship within 1 day.
Manufacturer Production time : 6-8 weeks
Weight : 0.23460 KG
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