| Manufacturer Part Number : |
TPH3207WS |
| Our Part Number : |
IC-TPH3207WS |
| Manufacturer : |
Transphorm |
| Description : |
GAN FET 650V 50A TO247 |
| Packaging : |
Tube |
| Series : |
- |
| Part Status : |
Active |
| FET Type : |
N-Channel |
| Technology : |
GaNFET (Gallium Nitride) |
| Drain to Source Voltage (Vdss) : |
650V |
| Current - Continuous Drain (Id) @ 25°C : |
50A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) : |
8V |
| Vgs(th) (Max) @ Id : |
2.65V @ 700μA |
| Gate Charge (Qg) (Max) @ Vgs : |
42nC @ 8V |
| Input Capacitance (Ciss) (Max) @ Vds : |
2197pF @ 400V |
| Vgs (Max) : |
±18V |
| FET Feature : |
- |
| Power Dissipation (Max) : |
178W (Tc) |
| Rds On (Max) @ Id, Vgs : |
41 mOhm @ 32A, 8V |
| Operating Temperature : |
-55°C ~ 150°C (TJ) |
| Mounting Type : |
Through Hole |
| Supplier Device Package : |
TO-247 |
| Package / Case : |
TO-247-3 |
| Other Part Number : |
TPH3207WS-ND |
| Delivery Time : |
Ship within 1 day. |
| Manufacturer Production time : |
6-8 weeks |
| Weight : |
0.23921 KG |
TPH3207WS.pdf
