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Manufacturer Part Number: TPN1R603PL,L1Q
Our Part Number:

IC-TPN1R603PL,L1Q

Product Category: MOSFETs
Manufacturer / Brand: Toshiba Semiconductor and Storage
Brief Description: X35 PB-F POWER MOSFET TRANSISTOR
Datasheet Download: TPN1R603PL,L1Q pdf datasheetTPN1R603PL,L1Q.pdf
Package Type: 8-PowerVDFN
Quantity Available: 63130 Pieces
Unit Price: Quote by Email: sales@ic-chips.com
Lead Free Status / RoHS Status: Lead free / RoHS Compliant
Moisture Sensitivity Level(MSL): 3(168 Hours)
Delivery Time: 1-2 Days
Date Code (D/C): New
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Manufacturer Part Number : TPN1R603PL,L1Q
Our Part Number : IC-TPN1R603PL,L1Q
Manufacturer : Toshiba Semiconductor and Storage
Description : X35 PB-F POWER MOSFET TRANSISTOR
Packaging : Tape & Reel (TR)
Series : U-MOSIX-H
Part Status : Active
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 30V
Current - Continuous Drain (Id) @ 25°C : 80A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 4.5V, 10V
Vgs(th) (Max) @ Id : 10V @ 10μA
Gate Charge (Qg) (Max) @ Vgs : 41nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds : 3900pF @ 15V
Vgs (Max) : ±20V
FET Feature : -
Power Dissipation (Max) : 104W (Tc)
Rds On (Max) @ Id, Vgs : 1.2 mOhm @ 80A, 10V
Operating Temperature : 175°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : 8-TSON Advance (3.3x3.3)
Package / Case : 8-PowerVDFN
Other Part Number : TPN1R603PLL1QTR-ND
Delivery Time : Ship within 1 day.
Manufacturer Production time : 6-8 weeks
Weight : 0.23336 KG
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