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Manufacturer Part Number: TPN2010FNH,L1Q
Our Part Number:

IC-TPN2010FNH,L1Q

Product Category: MOSFETs
Manufacturer / Brand: Toshiba Semiconductor and Storage
Brief Description: MOSFET N-CH 250V 5.6A 8TSON
Datasheet Download: TPN2010FNH,L1Q pdf datasheetTPN2010FNH,L1Q.pdf
Package Type: 8-PowerVDFN
Quantity Available: 75760 Pieces
Unit Price: Quote by Email: sales@ic-chips.com
Lead Free Status / RoHS Status: Lead free / RoHS Compliant
Moisture Sensitivity Level(MSL): 3(168 Hours)
Delivery Time: 1-2 Days
Date Code (D/C): New
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Manufacturer Part Number : TPN2010FNH,L1Q
Our Part Number : IC-TPN2010FNH,L1Q
Manufacturer : Toshiba Semiconductor and Storage
Description : MOSFET N-CH 250V 5.6A 8TSON
Packaging : Tape & Reel (TR)
Series : U-MOSVIII-H
Part Status : Active
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 250V
Current - Continuous Drain (Id) @ 25°C : 5.6A (Ta)
Drive Voltage (Max Rds On, Min Rds On) : 10V
Vgs(th) (Max) @ Id : 4V @ 200μA
Gate Charge (Qg) (Max) @ Vgs : 7nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds : 600pF @ 100V
Vgs (Max) : ±20V
FET Feature : -
Power Dissipation (Max) : 700mW (Ta), 39W (Tc)
Rds On (Max) @ Id, Vgs : 198 mOhm @ 2.8A, 10V
Operating Temperature : 150°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : 8-TSON Advance (3.3x3.3)
Package / Case : 8-PowerVDFN
Other Part Number : TPN2010FNHL1QTR-ND
Delivery Time : Ship within 1 day.
Manufacturer Production time : 6-8 weeks
Weight : 0.23409 KG
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