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Manufacturer Part Number: TPN4R712MD,L1Q
Our Part Number:

IC-TPN4R712MD,L1Q

Product Category: MOSFETs
Manufacturer / Brand: Toshiba Semiconductor and Storage
Brief Description: MOSFET P-CH 20V 36A 8TSON ADV
Datasheet Download: TPN4R712MD,L1Q pdf datasheetTPN4R712MD,L1Q.pdf
Package Type: 8-PowerVDFN
Quantity Available: 35540 Pieces
Unit Price: Quote by Email: sales@ic-chips.com
Lead Free Status / RoHS Status: Lead free / RoHS Compliant
Moisture Sensitivity Level(MSL): 3(168 Hours)
Delivery Time: 1-2 Days
Date Code (D/C): New
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Manufacturer Part Number : TPN4R712MD,L1Q
Our Part Number : IC-TPN4R712MD,L1Q
Manufacturer : Toshiba Semiconductor and Storage
Description : MOSFET P-CH 20V 36A 8TSON ADV
Packaging : Tape & Reel (TR)
Series : U-MOSVI
Part Status : Active
FET Type : P-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 20V
Current - Continuous Drain (Id) @ 25°C : 36A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 2.5V, 4.5V
Vgs(th) (Max) @ Id : 1.2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs : 65nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds : 4300pF @ 10V
Vgs (Max) : ±12V
FET Feature : -
Power Dissipation (Max) : 42W (Tc)
Rds On (Max) @ Id, Vgs : 4.7 mOhm @ 18A, 4.5V
Operating Temperature : 150°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : 8-TSON Advance (3.3x3.3)
Package / Case : 8-PowerVDFN
Other Part Number : TPN4R712MDL1QTR-ND
Delivery Time : Ship within 1 day.
Manufacturer Production time : 6-8 weeks
Weight : 0.23255 KG
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