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Manufacturer Part Number: TSM061NA03CV RGG
Our Part Number:

IC-TSM061NA03CV RGG

Product Category: MOSFETs
Manufacturer / Brand: Taiwan Semiconductor Corporation
Brief Description: MOSFET N-CH 30V 66A 8PDFN
Datasheet Download: TSM061NA03CV RGG pdf datasheetTSM061NA03CV RGG.pdf
Package Type: 8-PowerWDFN
Quantity Available: 70320 Pieces
Unit Price: Quote by Email: sales@ic-chips.com
Lead Free Status / RoHS Status: Lead free / RoHS Compliant
Moisture Sensitivity Level(MSL): 3(168 Hours)
Delivery Time: 1-2 Days
Date Code (D/C): New
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Manufacturer Part Number : TSM061NA03CV RGG
Our Part Number : IC-TSM061NA03CV RGG
Manufacturer : Taiwan Semiconductor Corporation
Description : MOSFET N-CH 30V 66A 8PDFN
Packaging : Tape & Reel (TR)
Series : -
Part Status : Active
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 30V
Current - Continuous Drain (Id) @ 25°C : 66A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 4.5V, 10V
Vgs(th) (Max) @ Id : 2.5V @ 250μA
Gate Charge (Qg) (Max) @ Vgs : 19.3nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds : 1136pF @ 15V
Vgs (Max) : ±20V
FET Feature : -
Power Dissipation (Max) : 44.6W (Tc)
Rds On (Max) @ Id, Vgs : 6.1 mOhm @ 16A, 10V
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : 8-PDFN (3x3)
Package / Case : 8-PowerWDFN
Other Part Number : TSM061NA03CV RGGTR-ND
Delivery Time : Ship within 1 day.
Manufacturer Production time : 6-8 weeks
Weight : 0.22845 KG
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